Process Flow
858 Process Flow
Agenda:
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Transistor Overview
Fab area overview
858 process flow
Fab tour - Optional
858 Process Flow
Transistor
Overview
Fab-18, Training
Basic Terms
• Atom - The smallest division of an element.
• The basic components of an atom are:
• Protons - positive charge (“+”)
• Electrons - negative charge (“-”)
• Neutrons - no charge
• An object is negatively charged when there are more electrons then protons.
• An object is positively charged when there are
Conductor - A material that has atomic structure which permit rapid movement of free electrons.
Insulators - A materials that has all his electrons are tightly held to the nucleus of the atom and present considerable resistance.
Semiconductors - With the right power control the material can be use as conductor or as isolator.
Current - Movement of electrons (from “-” to “+”).
Note - The current direction is always in the opposite to the electrons direction.
Build the wafer
• Made out from quartz which contained in send.
• In thermal process we melting and distilled the sand.
• A mono crystal seed is inserted into the melted silicon, and as the seed rotates in the melted silicon, a crystal is grows.
• The process takes few days and then it’s slowly extracted and we ending with 5 foot-long ingot of Silicon.
• Cutting the ingot to wafers.
Phosphors/Arsenic Atom
5 Electrons
Silicon Atom
Nuclear
4 Electrons
Nuclear
Boron/Indium Atom
3 Electrons
Nuclear
Silicon wafer structure
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Silicon wafer after Arsenic implant
Si
Si
Si
Si
Si
Si
Si
Si
As
Si
Si
Si
Si
Si
Si
Si
Si
Si
Silicon wafer after Boron implant
Si
Si
Si
Si
Si
Si
Si
Si
Bo
Si
Si
Si
Si
Si
Si
Si
Si
Si
PN Junction
P
N
P
N
Duplication Area
Forward Bias
V+
N
P
Reverse Bias
P
N
V+
N type Transistors
V+
P
N
V+
N
P Well
858 Process Flow
Fab area overview Fab-18, Training
858 Process Flow
Coat
Expose
Develop
Resist
Wafer
Wafer
Wafer
Link
1
2
Nikon/Micrascan
Litho
3
S.V.G
Fab-18, Training
858 Process Flow
• MS2 (MicraScan) - DUV & SVG
NWL, PWL, NTP, PTP, VA1, MT2, VA2, MT3,VA3
• Iline (B11/B12) - Nikon & SVG
NSD, PSD, MT4, VA4, MT5, VA5, MT6
• Polyimide (B9) - Nikon & SVG
Tab Pad (PAD WB)
• MS3 (MicraScan) or EXX (Nikon)
Poly, STR, Metal 1, Con
Litho
Fab-18, Training
858 Process Flow
Target
Power On/Of
Gas
Supply
CVD Chamber
Gas box
Plasma
Shower
Head
Ar
N2
Wafer
Heated Pedestal
Wafer
PVD
Thin Films
CVD
Fab-18, Training
858 Process Flow
• AMAT 5000
STI, ILD0, ILD0 CAP, Passiavation, Hard mask.
• AMAT 5500 (Sputter)
Metal 1-6, COBaH (Salicide)
• AMAT 5500 (ADH)
Adhesion 1-6
• NOVELLUS
Tungsten 1-6
• HDP
ILD 1-5
Thin Films
Fab-18, Training
858 Process Flow
POWERED ELECTRODE
Etch
By Acid
RF
1
Etch
By Plasma
Resist
2
3
GROUND ELECTRODE
Dry Etch
Etch
Wafer
Wet Etch
Fab-18, Training
858 Process Flow
DRY ETCH
Gasonic
Asher
LRC
Pad, Nitride, Poly, STR
Hitachi
Metal
TEL
WET ETCH
AWB
Resist removal, Tox preclean, Sacox preclean,
Gate preclean, Nit
AWS
Resist removal, Via,
Anchor
Oxide
Etch
Fab-18, Training
858 Process Flow
Tube
Process
Gasses
ATM VDF
Oxide
Silicon Dioxide
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•
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Temp
Pressure
Gases
Time
Exhaus t LPCVD VDF
Deposit
Layer
Wafer
Oxidation
Difusion
Wafer
Deposition
Fab-18, Training
858 Process Flow
• Atmospheric VDF
PADOX, TSOX, SACOX, GATE OX (GT13),
Tean (Anneal).
• LPCVD VDF
NITR, POLY, SPTE Ox, BTSP
• Cure
Pad Cure
• RTA
Thermal Anneal.
Difusion
Fab-18, Training
858 Process Flow
Magnet
N
Magnet
GAS
Filament
Magnet
S
Accelerator
Decelerator
Lenses
1 Die
Amat XR-80 / Varian E500
Implant
Fab-18, Training
858 Process Flow
• Amat XR80 - Low and high current
Tips, Source, Drain
• Varian E500 - Medium current
Halo, N-Well, P-Well
Implant
Fab-18, Training
858 Process Flow
P
P
N
N Well
N
P Well
BEFORE POLISH
N Well
P
P Well
P
N
N
Pad
POLISH
P